Type | Contents |
---|---|
Wafer Size | Piece ~ 8 inch |
Type of Wafer | Si,m Sapphire, Glass, GaN, GaAs |
Bonding Method | Eutetic, Adhesive, Epoxy, Polymer |
Bonding Method | Up to 400℃(752℉) |
Pressure | 10 ~ 20,000kgf |
Align Type | Inner Side Align (ISA with Real Time Align) |
MicroLED, MiniLED, FBAR filter, SAW filter, CIS, Vertical LED, Acceleration sensor, Piezoelectric, Solar cell, etc.