类型 | 内容 |
---|---|
基板大小 | Piece ~ 8 inch |
基板种类 | Si,m Sapphire, Glass, GaN, GaAs |
Bonding Method | Eutetic, Adhesive, Epoxy, Polymer |
过程温度 | 常温~400 ℃ |
过程压力 | 10 ~ 20,000kgf |
Align Type | Inner Side Align (ISA,实时 Align) |
MicroLED, MiniLED, FBAR filter, SAW filter, CIS, Vertical LED, 加速度传感器, 压电换能器, Solar cell 等等